Method and device for feeding arsenic dopant into a silicon...

Details Method and device for feeding arsenic dopant into a silicon... Method and device for feeding arsenic dopant into a silicon...

2011-04-12

2011-04-12

Song, Matthew J (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

C117S200000, C117S214000, C117S218000, C117S013000, C117S030000, C117S033000, C117S912000

Reexamination Certificate

active

07922817

ABSTRACT:
A feed assembly and method of use thereof of the present invention is used for the addition of a high pressure dopant such as arsenic into a silicon melt for CZ growth of semiconductor silicon crystals. The feed assembly includes a vessel-and-valve assembly for holding dopant, and a feed tube assembly, attached to the vessel-and-valve assembly for delivering dopant to a silicon melt. An actuator is connected to the feed tube assembly and a receiving tube for advancing and retracting the feed tube assembly to and from the surface of the silicon melt. A brake assembly is attached to the actuator and the receiving tube for restricting movement of the feed tube assembly and locking the feed tube assembly at a selected position.

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