Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Reexamination Certificate
2007-09-18
2007-09-18
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
C117S202000, C118S715000, C118S719000
Reexamination Certificate
active
11119681
ABSTRACT:
A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.
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Chang Mei
Chen Ling
Chung Hua
Ganguli Seshadri
Ku Vincent W.
Kunemund Robert
Patterson & Sheridan LLP
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