Method and apparatus of growing silicon single crystal and...

Details Method and apparatus of growing silicon single crystal and... Method and apparatus of growing silicon single crystal and...

2008-05-13

2008-05-13

Hiteshew, Felisa (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

C117S030000, C117S032000, C117S917000

Reexamination Certificate

active

07371283

ABSTRACT:
Disclosed is a metod of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(ΔTmax−ΔTmin)/ΔTmin}×100≦10, wherein ΔTmax is a maximum axial temperature gradient of the silicon melt and ΔTmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.

REFERENCES:
patent: 6287380 (2001-09-01), Falster et al.
patent: 6527859 (2003-03-01), Lee et al.

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