Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1998-09-01
2000-03-14
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117218, 117219, 117222, G30B 3500
Patent
active
060367768
ABSTRACT:
This invention provides a single-crystal manufacturing device which can perform the lifting of single crystals at a high speed, allowing single crystals with uniform qualities along their axes can be obtained.
The method for manufacturing single crystals according to this invention are achieved by using a single-crystal manufacturing device provided with a combination of a heat shield plate 1 and an after-cooler 21. The heat shield plate 1, the thickness of the lower portion of which is 2-6 times that of a conventional heat shield plate, surrounds the single crystal 7 being lifted. The after-cooler 21 covers the top surface of the rim 1a of the heat shield plate 1 and encompasses the single crystal 7 being lifted. The amount of cooling water supplied to the after-cooler 21 is slowly increased until the time the single crystal is lifted to a preset length, and then the amount of cooling water is kept constant. By this means, the temperature gradients of the single crystal in the region near the solid-liquid boundary can be increased, and the shape of the single crystal lifted can be easily kept unchanged. Furthermore, the lifting speed of the single crystal is kept constant from the top to the bottom of the crystal. Compared with conventional methods, the single-crystal lifting speed can be multiplied by a value of 1.3-2.2. Therefore, single crystals with uniform qualities along their axes can be obtained.
REFERENCES:
patent: 4597949 (1986-07-01), Jasinski et al.
patent: 4973454 (1990-11-01), Morioka et al.
patent: 5248378 (1993-09-01), Oda et al.
patent: 5268061 (1993-12-01), Sunwoo et al.
patent: 5567399 (1996-10-01), Von Ammon et al.
patent: 5853480 (1998-12-01), Kubota et al.
Kamogawa Makoto
Kotooka Toshiro
Shimanuki Yoshiyuki
Hiteshew Felisa
Komatsu Electronic Metals Co. Ltd.
LandOfFree
Method and device for manufacturing single crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and device for manufacturing single crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and device for manufacturing single crystals will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-165094