Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-07-05
2009-10-27
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S013000, C117S014000, C117S030000, C117S032000, C117S929000, C023S29500G, C423S328200, C423S345000
Reexamination Certificate
active
07608145
ABSTRACT:
Disclosed is a method of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(ΔTmax−ΔTmin)/ΔTmin}×100≦10, wherein ΔTmax is a maximum axial temperature gradient of the silicon melt and ΔTmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.
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Correspondence issued on Jun. 28, 2006 from Korea Intellectual Property Office regarding corresponding Korean Application.
Correspondence issued Dec. 27, 2006from Korea Intellectual Property Office regarding corresponding Korean Application.
Correspondence issued on Jun. 28, 2006from Korea Intellectual Property Office regarding corresponding Korean Application.
Hiteshew Felisa C
LRK Patent Firm, LLC
Siltron Inc.
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