Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Patent
1995-09-07
1998-04-21
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having moving solid-liquid-solid region
117 44, 117 45, 117 46, 117219, 117222, 117904, C30B 1306
Patent
active
057413592
ABSTRACT:
An apparatus for zone-melting recrystallization of a semiconductor layer includes a first heater, on which a semiconductor wafer including the semiconductor layer and upper and lower insulating films sandwiching the semiconductor layer is mounted, for radiantly heating a rear surface of the semiconductor wafer to a temperature at which the semiconductor layer and the insulating layers are not melted; and a second heater disposed above the semiconductor wafer and radiantly heating a front surface of the semiconductor wafer. The second heater has a heat generating point that produces a heated spot in the semiconductor layer and moves spirally while maintaining a fixed distance from the semiconductor wafer, thereby producing a large-area monocrystalline region in the semiconductor layer. In this zone-melting recrystallization, a single crystalline nucleus is produced in the semiconductor layer, and the entire semiconductor layer is recrystallized with the crystalline nucleus as a seed crystal. Therefore, the semiconductor layer is recrystallized with the same crystal structure and orientation as the crystalline nucleus, so that grain boundaries are reduced, resulting in a semiconductor layer with increased grain size.
REFERENCES:
patent: 4406709 (1983-09-01), Celler et al.
patent: 4479846 (1984-10-01), Smith et al.
patent: 4549913 (1985-10-01), Hayafuji et al.
patent: 4585512 (1986-04-01), Hayafuji et al.
patent: 4737233 (1988-04-01), Kamgar et al.
patent: 4861418 (1989-08-01), Nishimura et al.
patent: 4915772 (1990-04-01), Fehlner et al.
Knapp et al., "Growth of Si on Insulators Using Electron Beams", Journal of Crystal Growth, vol. 63, No. 3, Oct. 1, 1983, pp. 445-452.
Susumu Namba, "Crystallization of Vacuum-Evaporated Germanium Films by the Electron-Beam Zone-Melting Process", Journal of Applied Physics, vol. 37, No. 4, Mar. 15, 1996, pp. 1929-1930.
Kato Manabu
Motoda Takashi
Kunemund Robert
Mitsubishi Denki & Kabushiki Kaisha
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