Method and apparatus of generating PDMAT precursor

Details Method and apparatus of generating PDMAT precursor Method and apparatus of generating PDMAT precursor

2005-06-14

2005-06-14

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

C117S090000, C117S091000, C117S104000, C117S105000, C117S952000, C118S715000, C118S718000

Reexamination Certificate

active

06905541

ABSTRACT:
A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The precursor is generated in a canister having a surrounding heating element configured to reduce formation of impurities.

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