Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-03-22
2005-03-22
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S093000, C117S102000, C117S105000
Reexamination Certificate
active
06869481
ABSTRACT:
A method and a device for regulating a pressure in an epitaxy reactor, wherein the epitaxy reactor has a wafer handling chamber WHC, a process chamber PC, and a gate valve GV connecting the two chambers. The wafer handling chamber is continuously purged with inert gas. The pressure difference between the wafer handling chamber and the process chamber is measured, and the resulting measurement signal is used in a control circuit to regulate the pressure in the wafer handling chamber. In this case the pressure in the wafer handling chamber is reduced if the pressure difference is above a predetermined value and the pressure in the wafer handling chamber is increased if the pressure difference is below a predetermined value. The predetermined pressure difference is defined as a pressure being between 5 and 500 PA. The WHC and the PC each have a gas discharge line and a gas input line. There is a differential pressure sensor for measuring the pressure difference between the chambers and control unit for regulating the pressure in the WHC.
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English Patent Abstract of Japan Corresponding to JP8-213318.
English Machine Translationcorresponding to JP8-213318.
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English Derwent Abstract AN 1998-064569 Corresponding to DE19728310.
English Patent Abstract of Japan Corresponding to JP5-102088.
Brenninger Georg
Schatzeder Anton
Collard & Roe P.C.
Hiteshew Felisa
Siltronic AG
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