LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Low 1c screw dislocation 3 inch silicon carbide wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Low defect axially grown single crystal silicon carbide

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Low defect density epitaxial wafer and a process for the...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low defect density/arbitrary lattice constant heteroepitaxial la

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low indium content quantum well structures

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Low micropipe 100 mm silicon carbide wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Low micropipe 100 mm silicon carbide wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low temperature epitaxial growth of quaternary wide bandgap...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low temperature ion-beam assisted deposition methods for realizi

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low temperature load and bake

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Low temperature load and bake

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low temperature selective growth of silicon or silicon alloys

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low vacuum vapor process for producing epitaxial layers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low-resistivity n -type semiconductor diamond and method of...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Lower bandgap, lower resistivity, silicon carbide heteroepitaxia