Low vacuum vapor process for producing epitaxial layers

Details Low vacuum vapor process for producing epitaxial layers Low vacuum vapor process for producing epitaxial layers

1998-01-15

2000-02-22

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 93, 117 97, 117906, 117102, 505461, 505123, 505729, 505731, C30B 2518

Patent

active

060275642

ABSTRACT:
A method for fabricating composite articles with an epitaxial layer is described. The method can be performed under conditions of relatively high pressure and low substrate surface temperature. The resulting epitaxial layers can demonstrate various advantageous properties, such as low pore density and/or inclusions with small average particle size diameter.

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