Lower bandgap, lower resistivity, silicon carbide heteroepitaxia

Details Lower bandgap, lower resistivity, silicon carbide heteroepitaxia Lower bandgap, lower resistivity, silicon carbide heteroepitaxia

1995-01-17

1998-06-16

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117951, C30B 2936

Patent

active

057663432

ABSTRACT:
A silicon carbide semiconductor material; and method of making same, in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 1200.degree. C. or less, and produces a heterolayer having a reduced bandgap, and hence reduced contact resistance, but which is fabricatable with the less expensive equipment commonly used to fabricate silicon based semiconductors.

REFERENCES:
patent: 5200022 (1993-04-01), Kong et al.
patent: 5248385 (1993-09-01), Powell
patent: 5270554 (1993-12-01), Palmour
patent: 5326992 (1994-07-01), Yoder
patent: 5363800 (1994-11-01), Larkin et al.
V. Dmitriev et al., "Growth of SiC and SiC-AlN solid solution by containeree liquid phase epitaxy," Journal of Crystal Growth, vol. 128, No. 1-4, pp. 343-348, Mar. 1993 (abstract only).
K.J. Irvine et al., "Heteropolytype growth of beta silicon carbide on alpha silicon carbide by low pressure chemical vapor deposition at 1150 .degree.C," Semi. Heterstructures for Photonic & Electronic App. Symp., Mater. Res. Soc., pp. 793-796, 1993.
A.J. Learn et al., "Low-Temperature Epitaxy of .beta.-SiC by Reactive Deposition," Applied Physics Letters, vol. 17, No. 1, 1 Jul. 1970, pp. 26-29.
V.A. Dmitriev et al., Low Resistivity (.about.10.sup.-5 .OMEGA.cm.sup.2) Ohmic Contacts to 6H Silicon Carbide Fabricated using Cubic Silicon Carbide Contact Layer, Applied Physics Letters, vol. 64, No. 3 (Jan. 17, 1994), at p. 318.
Letter dated Dec. 29, 1994, from Pamela Karwowski of Canterbury Press, to Ed(ward) Miles of the Naval Research Laboratory.

Affiliated with

Also associated with

Rating

Lower bandgap, lower resistivity, silicon carbide heteroepitaxia does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lower bandgap, lower resistivity, silicon carbide heteroepitaxia, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lower bandgap, lower resistivity, silicon carbide heteroepitaxia will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1720265