GaN bulk growth by Ga vapor transport

Details GaN bulk growth by Ga vapor transport GaN bulk growth by Ga vapor transport

2011-01-11

2011-01-11

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S089000, C117S094000, C117S104000, C117S105000

Reexamination Certificate

active

07867335

ABSTRACT:
GaN is grown by creating a Ga vapor from a powder, and using an inert purge gas from a source to transport the vapor to a growth site where the GaN growth takes place. In one embodiment, the inert gas is N2, and the powder source is GaN powder that is loaded into source chambers. The GaN powder is congruently evaporated into Ga and N2vapors at temperatures between approximately 1000 and 1200° C. The formation of Ga liquid in the powder is suppressed by the purging of an inert gas through the powder. The poser may also be isolated from a nitride containing gas provided at the growth cite. In one embodiment, the inert gas is flowed through the powder.

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Kamler, G. , et al., “Bulk GaN single-crystals growth”,Journal of Crystal Growth, 212(1-2—, (2000),39-48.

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