GaAsP epitaxial wafer and a method for manufacturing it

Details GaAsP epitaxial wafer and a method for manufacturing it GaAsP epitaxial wafer and a method for manufacturing it

1997-12-29

2000-04-11

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117102, 117103, 117104, 117954, 117955, C30B 2504

Patent

active

060483970

ABSTRACT:
A GaAsP epitaxial wafer 10 which has a GaAs.sub.1-x P.sub.x (0.45<x<1) constant nitrogen concentration layer 6 formed by doping a constant composition layer with nitrogen wherein the constant nitrogen concentration layer 6 has the following upper and lower limits of nitrogen concentration:

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patent: 5041883 (1991-08-01), Lindquist et al.
patent: 5456675 (1995-10-01), Sato et al.
patent: 5751026 (1998-05-01), Sato et al.
Matsushima et al., "Nitrogen doping into GaAs P using ionized beam in molecular beam epitaxy", Journal of Crystal Growth, vol. 43 No. 3 pp. 281-286, 1978.

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