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Capacitor material for use in circuitized substrates,...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
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Channel formation after source and drain regions are formed

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Circuit element having a metal silicide region thermally...

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Cluster ion implantation for defect engineering

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
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CMOS fabrication process with differential rapid thermal...

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CMOS image sensor and method for fabricating the same

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CMOS transistors fabricated in optimized RTA scheme

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Cobalt silicide fabrication using protective titanium

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Compound semiconductor device

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Contact forming method for semiconductor device

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Contamination free source for shallow low energy junction implan

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Controlled cleavage process and device for patterned films

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Controlled cleavage process and device for patterned films...

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Controlled cleavage process using pressurized fluid

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Controlled cleavage process using pressurized fluid

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Controlled cleavage process using pressurized fluid

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Covert transformation of transistor properties as a circuit...

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