Controlled cleavage process using pressurized fluid

Details Controlled cleavage process using pressurized fluid Controlled cleavage process using pressurized fluid

1999-05-05

2000-01-11

Chaudhari, Chandra

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438800, H01L 21425

Patent

active

060135670

ABSTRACT:
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

REFERENCES:
patent: 5374564 (1994-12-01), Bruell

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