Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-01-10
2009-06-02
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257S532000
Reexamination Certificate
active
07541265
ABSTRACT:
A material for use as part of an internal capacitor within a circuitized substrate includes a polymer (e.g., a cycloaliphatic epoxy or phenoxy based) resin and a quantity of nano-powders of ferroelectric ceramic material (e.g., barium titanate) having a particle size substantially in the range of from about 0.01 microns to about 0.90 microns and a surface area for selected ones of said particles within the range of from about 2.0 to about 20 square meters per gram. A circuitized substrate adapted for using such a material and capacitor therein and a method of making such a substrate are also provided. An electrical assembly (substrate and at least one electrical component) and an information handling system (e.g., personal computer) are also provided.
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Das Rabindra N.
Lauffer John M.
Papathomas Kostas I.
Poliks Mark D.
Arora Ajay K.
Endicott Interconnect Technologies, Inc.
Fraley Lawrence R.
Hinman, Howard & Kattell
Le Thao X
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