CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2007-07-10

2007-07-10

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S433000

Reexamination Certificate

active

11319067

ABSTRACT:
A CMOS image sensor includes a first conductive type semiconductor substrate having an active region and a device isolation region, a device isolation film formed in the device isolation region of the semiconductor substrate, a second conductive type diffusion region formed in the active region of the semiconductor substrate, and an ion implantation prevention layer formed in the vicinity of the device isolation film, including a boundary portion between the device isolation film and the second conductive type diffusion region.

REFERENCES:
patent: 5801083 (1998-09-01), Yu et al.
patent: 6979587 (2005-12-01), Lee
patent: 7005689 (2006-02-01), Song et al.
patent: 2005/0142775 (2005-06-01), Koh
patent: 2005/0179071 (2005-08-01), Mouli
patent: 10-2003-0056323 (2003-07-01), None
patent: 2005-062143 (2005-06-01), None

Affiliated with

Also associated with

Rating

CMOS image sensor and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS image sensor and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3722058