Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-04-05
2011-04-05
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S528000, C257SE21339
Reexamination Certificate
active
07919402
ABSTRACT:
A method of semiconductor manufacturing is disclosed in which doping is accomplished by the implantation of ion beams formed from ionized molecules, and more particularly to a method in which molecular and cluster dopant ions are implanted into a substrate with and without a co-implant of non-dopant cluster ion, such as a carbon cluster ion, wherein the dopant ion is implanted into the amorphous layer created by the co-implant in order to reduce defects in the crystalline structure, thus reducing the leakage current and improving performance of the semiconductor junctions. These compounds include co-implants of carbon clusters with implants of monomer or cluster dopants or simply implanting cluster dopants. In particular, the invention described herein consists of a method of implanting semiconductor wafers implanting semiconductor wafers with carbon clusters followed by implants of boron, phosphorus, or arsenic, or followed with implants of dopant clusters of boron, phosphorus, or arsenic.
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Horsky Thomas N.
Jacobson Dale C.
Krull Wade A.
Sekar Karuppanan
Katten Muchine Rosenman LLP
Paniaguas John S.
SemEquip Inc.
Smoot Stephen W
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