Cobalt silicide fabrication using protective titanium

Details Cobalt silicide fabrication using protective titanium Cobalt silicide fabrication using protective titanium

2006-01-10

2006-01-10

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S583000, C438S586000, C438S649000, C438S655000, C438S682000

Reexamination Certificate

active

06984574

ABSTRACT:
A cobalt silicide fabrication process entails first depositing a cobalt layer (120) on a silicon-containing EPROM region. A titanium layer (130) is formed over the cobalt layer by ionized physical vapor deposition (“IPVD”) to protect the cobalt layer from contaminant gases. Cobalt of the cobalt layer is reacted with silicon of the EPROM region to form a cobalt silicide layer (210) after which the titanium layer and any unreacted cobalt are removed. Use of IPVD to form the titanium layer by improves the step coverage to produce a better cobalt silicide layer.

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