Covert transformation of transistor properties as a circuit...

Details Covert transformation of transistor properties as a circuit... Covert transformation of transistor properties as a circuit...

2007-02-22

2009-06-02

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

Reexamination Certificate

active

07541266

ABSTRACT:
A technique for and structures for camouflaging an integrated circuit structure. The technique includes the use of a light density dopant (LDD) region of opposite type from the active regions resulting in a transistor that is always off when standard voltages are applied to the device.

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