Contamination free source for shallow low energy junction implan

Details Contamination free source for shallow low energy junction implan Contamination free source for shallow low energy junction implan

1997-05-27

1999-04-06

Niebling, John

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438530, 438682, 438301, H01L 21265

Patent

active

058917918

ABSTRACT:
A method for forming a P-type region in a semiconducting crystalline substrate by ion implantation is disclosed, wherein the implant specie is an ionic molecule that contains titanium and boron.

REFERENCES:
patent: 5225357 (1993-07-01), Ho
patent: 5354696 (1994-10-01), Oostra et al.
patent: 5536676 (1996-07-01), Chewg et al.
patent: 5571753 (1996-11-01), Suruwatari
patent: 5677213 (1997-10-01), Lee

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