Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-01-04
2005-01-04
Chaudhari, Chandra (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S592000, C438S653000
Reexamination Certificate
active
06838363
ABSTRACT:
The introduction of a barrier diffusion material, such as nitrogen, into a silicon-containing conductive region, for example the drain and source regions and the gate electrode of a field effect transistor, allows the formation of nickel silicide, which is substantially thermally stable up to temperatures of 500° C. Thus, the device performance may significantly improve as the sheet resistance of nickel silicide is significantly less than that of nickel disilicide.
REFERENCES:
patent: 5444024 (1995-08-01), Anjum et al.
patent: 5950098 (1999-09-01), Oda et al.
patent: 6008124 (1999-12-01), Sekiguchi et al.
patent: 6054386 (2000-04-01), Prabhakar
patent: 6242785 (2001-06-01), Hossain et al.
patent: 6274447 (2001-08-01), Takasou
patent: 6306763 (2001-10-01), Gardner et al.
patent: 6383880 (2002-05-01), Ngo et al.
patent: 6586333 (2003-07-01), Woo et al.
patent: 20020061639 (2002-05-01), Itonaga
patent: 20020064918 (2002-05-01), Lee et al.
patent: WO 04001826 (2003-12-01), None
Ghandhi, “VLSI Fabrication Principles”, 1983, pp. 353-354.*
Cheng et al., “Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions,”Thin Solid Films, 355-356:412-16, 1999.
Lee et al., “Improved NiSi Salicide Process Using Presilicide N+2 Implant for MOSFETs,”Electron Device Letters, vol. 21, 2000.
Tien-Sheng Chao and Liang Yao Lee, “Performance Improvement of Nickel Salicided n-Type Metal Oxide Semiconductor Field Effect Transistors by Nitrogen Implantation,”Jpn. J. Appl. Phys., 41:L381-83, 2002.
Horstmann Manfred
Kammler Thorsten
Wieczorek Karsten
Advanced Micro Devices , Inc.
Chaudhari Chandra
Williams Morgan & Amerson P.C.
LandOfFree
Circuit element having a metal silicide region thermally... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Circuit element having a metal silicide region thermally..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit element having a metal silicide region thermally... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3397629