Use of sacrificial inorganic dielectrics for dual damascene...
Use of selective ozone teos oxide to create variable...
Use of separate ZnTe interface layers to form OHMIC contacts to
Use of stop layer for chemical mechanical polishing of CU damasc
Use of Ta-capped metal line to improve formation of memory...
Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN
Use of titanium hydride in integrated circuit fabrication
Use of voids between elements in semiconductor structures...
Using implantation method to control gate oxide thickness on...
Using implants to lower anneal temperatures
Using stabilizers in electroless solutions to inhibit...
Using zeolites to improve the mechanical strength of low-k...
Utilization of annealing enhanced or repaired seed layer to...
Utilization of die repattern layers for die internal connections
Utilization of SiH.sub.4 soak and purge in deposition processes
UV assisted thermal processing
UV blocking and crack protecting passivation layer...
UV resist curing as an indirect means to increase SiN corner sel
Vacuum baked HSQ gap fill layer for high integrity borderless vi
Vacuum film formation method and device