Use of separate ZnTe interface layers to form OHMIC contacts to

Details Use of separate ZnTe interface layers to form OHMIC contacts to Use of separate ZnTe interface layers to form OHMIC contacts to

1997-09-25

1999-06-01

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438602, 136256, H01L 2348

Patent

active

059096322

ABSTRACT:
A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising:

REFERENCES:
patent: 4319069 (1982-03-01), Tyan
patent: 4456630 (1984-06-01), Basol
patent: 4568792 (1986-02-01), Mooney et al.
patent: 4680611 (1987-07-01), Basol
patent: 4710589 (1987-12-01), Meyers et al.
patent: 5293074 (1994-03-01), Taskar et al.
patent: 5393675 (1995-02-01), Compaan
A. Mondal, "Electrochemical deposition of thin ZnTe films as a contact for CdTe solar cells", Solar Energy Materials and Solar Cells vol. 26, pp. 181-187 (no month given), 1992.
Journal Paper, A. Mondal et al., Solar Energy Materials and Solar Cells 26, 181 (1992). No month.
Journal Paper A. Fahrenbruch., Solar Cells 21, 399 (1987) No month.
Journal Paper, F. Debbagh et al., Solar Energy Materials and Solar Cells 31, 1 (1993). No month.

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