Use of Ta-capped metal line to improve formation of memory...

Details Use of Ta-capped metal line to improve formation of memory... Use of Ta-capped metal line to improve formation of memory...

2006-08-01

2006-08-01

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S099000, C438S597000, C438S648000, C438S653000

Reexamination Certificate

active

07084062

ABSTRACT:
Disclosed are methods for deposition of improved memory element films for semiconductor devices. The methods involve providing a hard mask over an upper surface of a metal line of a semiconductor substrate where vias are to be placed, recess etching the mask substantially in all upper surfaces except where vias are to be placed, depositing a Ta-containing capping layer over substantially all the metal line surfaces except the surface where vias are to be placed, polishing the Ta-containing capping layer to produce a damascened Ta-containing cap while exposing the metal line at the via forming surface, depositing a dielectric layer, patterning the dielectric layer to form a via to expose a portion of the metal line, and depositing memory element films. The improved Ta—Cu interface of the subject invention mitigates and/or eliminates lateral growth of memory element films and copper voiding under the dielectric layer at the top surface of the metal line, and thereby enhances reliability and performance of semiconductor devices.

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