Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-09-03
2000-02-15
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438648, 438656, 118715, 118719, 118729, 20429811, H01L 2144
Patent
active
060252669
ABSTRACT:
A vacuum film formation device is proposed in which when forming TiN/Ti films before forming a W film, the W film is prevented from peeling, the Ti film can be formed on all the surfaces of a wafer, and a chamber can be alternately used for forming the TiN film or the Ti film, thereby enlarging the film-forming effective area and improving the productivity. For this purpose, a drive mechanism 1 of a cover shield 2 is provided in a vacuum device chamber. When the films are formed, the vertical position of the cover shield 2 is changed by the drive mechanism 1 when forming the TiN film and when forming the Ti film, respectively.
Everhart Caridad
NEC Corporation
LandOfFree
Vacuum film formation method and device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vacuum film formation method and device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vacuum film formation method and device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1905595