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Gate dielectric based on oxynitride grown in N.sub.2 O and annea

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
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Gate dielectric having a flat nitrogen profile and method of...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
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Gate dielectric having a flat nitrogen profile and method of...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
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Gate dielectric structure for reducing boron penetration and...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
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Gate insulation film having a slanted nitrogen concentration...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
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Gate oxidation technique for deep sub quarter micron transistors

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
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Growing smooth semiconductor layers

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
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