Gate dielectric based on oxynitride grown in N.sub.2 O and annea

Details Gate dielectric based on oxynitride grown in N.sub.2 O and annea Gate dielectric based on oxynitride grown in N.sub.2 O and annea

1996-04-15

1999-03-09

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

H01L 21316

Patent

active

058800409

ABSTRACT:
A new technique for the formation of high quality ultrathin gate dielectrics is proposed. Gate oxynitride was first grown in N.sub.2 O and then annealed by in-situ rapid thermal NO-nitridation. This approach has the advantage of providing a tighter nitrogen distribution and a higher nitrogen accumulation at or near the Si--SiO.sub.2 interface than either N.sub.2 O oxynitride or nitridation of SiO.sub.2 in the NO ambient. It is applicable to a wide range of oxide thickness because the initial rapid thermal N.sub.2 O oxidation rate is slow but not as self-limited as NO oxidation. The resulting gate dielectrics have reduced charge trapping, lower stress-induced leakage current and significant resistance to interface state generation under electrical stress.

REFERENCES:
patent: 5198392 (1993-03-01), Fukuda et al.
patent: 5264396 (1993-11-01), Thakur et al.
patent: 5397720 (1995-03-01), Kwong et al.
patent: 5407870 (1995-04-01), Okada et al.
patent: 5591681 (1997-01-01), Wristers et al.
patent: 5631199 (1997-05-01), Park
Wolf, Stanley and Richard Tauber, Silicon Processing For The VLSI ERA, vol. 1; pp. 198-199, 221-223, (1986).
Bhat, et al., "MOS Characteristics Of Ultrathin NO-Grown Oxynitrides", IEEE Electron Device Letters, vol. 15, No. 10, pp. 421-423, Oct. 1994.
Bhat, et al., "Performance And Hot-Carrier Reliability Of N-And P-MOSFETs with Rapid Thermally NO-nitrided SiO.sub.2 Gate Dielectrics", IEDM Technical Digest, pp. 329-332, (1994).
Fukuda, et al., "Highly Reliable Thin Nitrided SiO.sub.2 Films Formed By Rapid Thermal Processing In An N.sub.2 O Ambient", Electronics Letters, vol. 26, No. 18, pp. 1505-1506, Aug. 1990.
Green, et al., "Rapid Thermal Oxidation Of Silicon N.sub.2 O Between 800 And 1200.degree. C.: Incorporated Nitrogen And Interfacial Roughness", Appl. Phy. Lett., vol. 65, No. 7, pp. 848-850, Aug. 1994.
Harrison, et al., "Dielectrics On Silicon Thermally Grown Or Annealed In A Nitrogen Rich Environment ", Materials Research Society Symposium Proceedings, vol. 342, pp. 151-161, Apr. 1994.
Hori, "Inversion Layer Mobility Under High Normal Field In Nitrided-Oxide MOSFET's", IEEE Transactions On Electron Devices, vol. 37, No. 9, pp. 2058-2069, Sep. 1990.
Ting, et al., "Composition And Growth Kinetics Of Ultrathin SiO.sub.2 Films Formed By Oxidizing Si Substrates In N.sub.2 O", Appl. Phys. Lett., vol. 57, No. 26, pp. 2808-2810, Dec. 1990.
Joshi, et al., "Oxynitride Gate Dielectrics For p.sup.+ -Polysilicon Gate MOS Devices", IEEE Electron Devices Letters, vol. 14, No. 12, pp. 560-562, Dec. 1993.
Naruke, et al., "Stress Induced Leakage Current Limiting To Scale Down Eeprom Tunnel Oxide Thickness", IEDM Technical Digest, pp. 424-427, Dec. 1988.
Okada, et al., "Furnace Grown Gate Oxynitride Using Nitric Oxide (NO)", IEEE Transactions On Electron Devices, vol. 41, No. 9, pp. 1608-1613, Sep. 1994.
Okada, et al., "Gate Oxynitride Grown In Nitric Oxide (NO)", Symposium On VLSI Technology Digest Of Technical Papers, pp. 105-106, (1994).
Sun, et al., "Characterization And Optimization Of NO-Nitrided Gate Oxide By RTP", IEDM Technical Digest, pp. 687-690, Dec. 1995.
Sun, et al., "Gate Oxynitride Growth In N.sub.2 O And Annealed In NO Using Rapid Thermal Processing", Mat. Res. Soc. Symp. Proc., vol. 387, pp. 241-246, (1995).
Tang, et al., "Nitrogen Content Of Oxynitride Films On Si(100)", Appl. Phys. Lett., vol. 64, No. 25, pp. 3473-3475, Jun. 1994.
Ting, et al., "Composition And Growth Kinetics Of Ultrathin SiO.sub.2 Films Formed By Oxidizing Si Substrates In N.sub.2 O", Appl. Phys. Lett., vol. 57, No. 26, pp. 2808-2810, Dec. 1990.
Tobin, et al., "Silicon Oxynitride Formation In Nitrous Oxide (N.sub.2 O): The Role Of Nitric Oxide (NO)", Symposium On VLSI Technlogy Digest Of Technical Papers, pp. 51-52, May 1993.
Yao, et al., "High Quality Ultrathin Dielectric Films Grown On Silicon In A Nitric Oxide Ambient", Appl. Phys. Lett., vol. 64, No. 26, pp. 3584-3586, Jun. 1994.
Yao, et al., "The Electrical Properties Of Sub-5-nm Oxynitride Dielectrics Prepared In A Nitric Oxide Ambient Using Rapid Thermal Processing", IEEE Electron Device Letters, Vo. 15, No. 12, pp. 516-518, Dec. 1994.

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