Gate dielectric having a flat nitrogen profile and method of...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate

Reexamination Certificate

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C438S197000, C438S275000, C438S579000, C438S775000, C438S777000

Reexamination Certificate

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10875482

ABSTRACT:
The present invention provides a gate dielectric having a flat nitrogen profile, a method of manufacture therefor, and a method of manufacturing an integrated circuit including the flat nitrogen profile. In one embodiment, the method of manufacturing the gate dielectric includes forming a gate dielectric layer (410) on a substrate (310), and subjecting the gate dielectric layer (410) to a nitrogen containing plasma process (510), wherein the nitrogen containing plasma process (510) has a ratio of helium to nitrogen of 3:1 or greater.

REFERENCES:
patent: 5288527 (1994-02-01), Jousse et al.
patent: 6096590 (2000-08-01), Chan et al.
patent: 6503846 (2003-01-01), Niimi et al.
patent: 6667251 (2003-12-01), McFadden et al.
patent: 6730566 (2004-05-01), Niimi et al.

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