Growing smooth semiconductor layers

Details Growing smooth semiconductor layers Growing smooth semiconductor layers

2005-07-26

2005-07-26

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S493000, C438S761000, C438S763000

Reexamination Certificate

active

06921726

ABSTRACT:
A method includes epitaxially growing a semiconductor layer with a free surface and performing an anneal that reduces atomic roughness on the free surface. The free surface has an orientation with respect to lattice axes of the layer for which atoms in flat regions of the free surface have more chemical bonds to the layer than do, at least, some of the atoms at edges of monolayer steps on the free surface.

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