Use of dilute steam ambient for improvement of flash devices
Use of dilute steam ambient for improvement of flash devices
Use of discrete conductive layer in semiconductor device to...
Use of dummy underlayers for improvement in removal rate consist
Use of electroactive monolayers in generating negative...
Use of gate electrode workfunction to improve DRAM refresh
Use of high-K dielectric material for ONO and tunnel oxide...
Use of high-K dielectric material in modified ONO structure...
Use of high-k dielectric materials in modified ONO structure...
Use of hydrogen implantation to improve material properties...
Use of implanted ions to reduce oxide-nitride-oxide (ONO) etch r
Use of indium to define work function of p-type doped...
Use of irregularly shaped conductive filler features to...
Use of membrane properties to reduce residual stress in an...
Use of multifunctional reagents for the surface modification...
Use of multiple slots surrounding base region of a bipolar junct
Use of nitric oxide surface anneal to provide reaction...
Use of nitrides for flip-chip encapsulation
Use of non-ion-implanted resistive silicon oxynitride films...
Use of oxide surface to facilitate gate break on a carrier...