Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-21
1999-08-17
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257324, H01L 21465, H01L 2144
Patent
active
059397500
ABSTRACT:
A method for fabricating a first memory cell and a second memory cell electrically isolated from each other. The method including forming a first polysilicon (poly I) layer on an oxide coated substrate and masking the poly I layer to pattern the first memory cell and the second memory cell and an unmasked portion therebetween. The unmasked portion of the poly I layer is transformed into an insulator such that the insulator electrically isolates the poly I layer (e.g., floating gate) of the first memory cell from the poly I layer (e.g., floating gate) of the second memory cell.
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Advanced Micro Devices
Chaudhuri Olik
Coleman William David
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