Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Valentine, Jami M (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C365S185010, C438S257000, C257SE21209
Reexamination Certificate
active
07989870
ABSTRACT:
A flash memory integrated circuit and a method for fabricating the same. A gate stack includes an initial oxide layer directly in contact with a silicon layer, defining an oxide-silicon interface therebetween. Additional oxide material is formed substantially uniformly along the oxide-silicon interface. Polysilicon grain boundaries at the interface are thereby passivated after etching. The interface can be formed between a tunnel oxide and a floating gate, and passivating the grain boundaries reduces erase variability. Oxide in an upper storage dielectric layer is enhanced in the dilute steam oxidation. The thin oxide layers serve as diffusion paths to enhance uniform distribution of OH species across the buried interfaces being oxidized.
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McKee Jeff A
Moore John T
Powell Don C
Weimer Ronald A
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
Valentine Jami M
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