Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2003-02-27
2010-10-19
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S046000, C438S099000, C977S702000, C977S703000, C977S705000, C977S720000, C977S755000
Reexamination Certificate
active
07816665
ABSTRACT:
A negative differential resistance (NDR) device, and methods of making and using the NDR device. The NDR device includes a substrate comprising a conductor material or a semi-conductor material and a self-assembled monolayer (SAM) that includes a first electroactive moiety and a spacer moiety disposed on the substrate that defines a barrier between the electroactive moiety and the substrate, wherein the NDR device exhibits negative differential resistance in the presence of a varying applied voltage. Also provided are NDR in multilayers in which the peak to valley ratio of the NDR response can be controlled by the number of layers; modulation of NDR using binding groups to one of the electrical contacts or to the electroactive moiety itself; and NDR devices that display multiple peaks in the current-voltage curve that contain electroactive moieties that have multiple low potential electrochemical oxidations and/or reductions.
REFERENCES:
patent: 6204513 (2001-03-01), El-Zein et al.
patent: 6320200 (2001-11-01), Reed et al.
patent: 6430511 (2002-08-01), Tour et al.
patent: 6512119 (2003-01-01), Bratkovski et al.
patent: 6551495 (2003-04-01), Porter et al.
patent: 2003/0143581 (2003-07-01), Franzen et al.
patent: WO03/073513 (2003-09-01), None
Broekaert, et al., A Monolithic 4-Bit 2-Gsps Resonant Tunneling Analog-to-Digitial Converter.IEEE Journal of Solid-State Circuits. vol. 33, No. 9 pp. 1342-1349 (1998).
Brown, J.L., and Pohm, A.V., 1-Mb Memory Chip Using Giant Magnetoresistive Memory Cells.IEEE Transactions on Components, Packaging, and Manufacturing Technology—Part A. vol. 17, No. 3 pp. 373-379 (1994).
Chen, et al., Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device.Science. vol. 286 pp. 1550-1552 (1999).
Chen, et al., Room-temperature negative differential resistance in nanoscale molecular junctions.Applied Physics Letters. vol. 77, No. 8 pp. 1224-1226 (2000).
Cornil, et al., Negative Differential Resistance in Phenylene Ethynylene Oligomers.Journal of the American Chemical Society. vol. 124, No. 14 pp. 3516-3517 (2002).
Gaudioso, et al., Vibrationally Mediated Negative Differential Resistance in a Single Molecule.Physical Review Letters. vol. 85, No. 9 pp. 1918-1921 (2000).
Gorman et al., Negative Differential Resistance in Patterned Electroactive Self-Assembled Monolayers.Langmuir. vol. 17, No. 22 pp. 6923-6930 (2001).
Gorman, et al., Scanning Probe Lithography to form Nanoscale Patterned Surfaces. ACS Meeting Slides. Apr. 1, 2001.
Holmlin, et al., Electron Transport through Thin Organic Films in Metal-Insulator-Metal Junctions Based on Self-Assembled Monolayers.Journal of the American Chemical Society. vol. 123, No. 21 pp. 5075-5085 (2001).
Huang, et al., New method of modelling a multipeak resonant tunnelling diode.Electronics Letters. vol. 30, No. 12 pp. 1012-1013 (1994).
Isnin, et al., Bimodal Cyclodextrin Complexation of Ferrocene Derivatives Containing n-Alkyl Chains of Varying Length.Journal of Organic Chemistry. vol. 56 pp. 35-41 (1991).
Ju, H., and Leech, D., Host-Guest Interaction at a Self-Assembled Monolayer/Solution Interface: An Electrochemical Analysis of the Inclusion of 11Ferrocenylcarbonyloxy)undecanethiol by Cyclodextrins.Langmuir. vol. 14 pp. 300-306 (1998).
Kaba, et al., Investigation of framework and cation substitutions in Keggin-type heteropoly acids probed by scanning tunneling microscopy and tunneling spectroscopy.Journal of Vacuum Science Technology. vol. 15, No. 3 pp. 1299-1304 (1997).
Kinne, M., and Barteau, M.A., STM and TS investigations of silver polyoxometalate monolayers: model compounds and potential multifunctional oxidation catalysts.Surface Science. vol. 447 pp. 105-111 (2000).
Leonard, F. and Tersoff, J., Negative Differential Resistance in Nanotube Devices.Physical Review Letters. vol. 85, No. 22 pp. 4767-4770 (2000).
Mathews, et al., A New RTD-FET Logic Family.Proceedings of the IEEE. vol. 87, No. 4 pp. 596-605.
Matsue, et al., Electron-Transfer Reactions Associated with Host-Guest Complexation. Oxidation of Ferrocenecarboxylic Acid in the Presence of b-Cyclodextrin.Journal of the American Chemical Society. vol. 107 pp. 3411-3417 (1985).
McCormack, et al., Cyclic Voltammetry of Ferrocene Carboxylic Acid Cyclodextrin Inclusion Complexes.Electrochimica Acta. vol. 37, No. 11 pp. 1939-1944 (1992).
Schulman, et al., Physics-Based RTD Current-Voltage Equation.IEEE Electron Device Letters. vol. 17, No. 5 pp. 220-222 (1996).
Seabaugh, et al., Silicon-Based Tunnel Diodes and Integrated Circuits. In 4thInternational Workshop of Quantum Functional Devices; Research and Development Association for Future Electron Devices: Japan. pp. 5-8 (2000).
Sun, et al., Resonant Tunneling Diodes: Models and Properties.Proceedings of the IEEE. vol. 86, No. 4 pp. 641-661 (1998).
Suzuki, et al., Ferrocene-Appended Cyclodextrins. The Effects of Temperature, Organic Solvent, Length of Spacer, and Cavity Size on the Complexation Behavior.Bull. Chem. Soc. Japan. vol. 66, No. 5 pp. 1472-1481 (1993).
Sze, S.M., Physics of Semiconductor Devices; 2ndEd. John Wiley and Sons: New York 1981. pp. 513-536.
Szejtli, J., Introduction and General Overview of Cyclodextrin Chemistry.Chemical Reviews. vol. 98, No. 5 pp. 1743-1753 (1998).
Tao, N.J., Probing Potential-Tuned Resonant Tunneling though Redox Molecules with Scanning Tunneling Microscopy.Physical Review Letters. vol. 76, No. 21 pp. 4066-4069 (1996).
van der Wagt, et al., RTD/HFET Low Standby Power SRAM Gain Cell.IEEE Electron Device Letters. vol. 19, No. 1 pp. 7-9 (1998).
Watanabe, et al., Monolithic Integration of InGaAs/InAIAs Resonant Tunneling Diode and HEMT for Single-Transistor Cell SRAM Application.Tech. Dig. IEDM. vol. 92 pp. 475-478 (1992).
Williamson, et al., 12 GHz Clocked Operation of Ultralow Power Interband Resonant Tunneling Diode Pipelined Logic Gates.IEEE Journal of Solid-State Circuits. vol. 32, No. 2 pp. 222-231 (1997).
Wold, D.J., and Frisbie, C. D., Fabrication and Characterization of Metal-Molecule-Metal Junctions by Conducting Probe Atomic Force Microscopy.Journal of the American Chemical Society. vol. 123 pp. 5549-5556 (2001).
Wold, D.J., and Frisbie, C.D., Formation of Metal-Molecule-Metal Tunnel Junctions: Microcontacts to Alkanethiol Monolayers with a Conducting AFM Tip.Journal of the American Chemical Society. vol. 122 pp. 2970-2971 (2000).
Xue, et al., Charge transfer and “band lineup” in molecular electronic devices: A chemical and numerical interpretation.Journal of Chemical Physics. vol. 115, No. 9 pp. 4292-4299 (2001).
Xue, et al., Negative differenential resistance in the scanning-tunneling spectroscopy of organic molecules.Physical Review B. vol. 59, No. 12 pp. R7852-7855 (1999).
Zeng, et al., Negative differential-resistance device involving two C60molecules.Applied Physics Letters. vol. 77, No. 22 pp. 3595-3597 (2000).
Zhao, et al., Equivalent Circuit Parameters of Resonant Tunneling Diodes Extracted from Self-Consistent Wigner-Poisson Simulation.IEEE Transactions on Electron Devices. vol. 48, No. 4 pp. 614-627 (2001).
Zhao, et al., Simulation of resonant tunneling structures: Origin of the I-V hysteresis and plateau-like structure.Journal of Applied Physics. vol. 87, No. 3 pp. 1337-1349 (2000).
Notification of Transmittal of International Preliminary Examination Report corresponding to International Patent Application No. PCT/US03/06095 dated Jan. 9, 2004.
Notification of Transmittal of the International Search Report or the Declaration corresponding to International Patent Application No. PCT/US03/06095 dated Jul. 3, 2003.
Switzer et al.,Negative Differential Resistance in Electochemically Self-Assembled Layered Nanostructures. The Journal of Physical Chemistry B. vol. 103, No. 3 pp.:395-398 (1999).
Zhou et al.,Modulated Chemical Doping of Individual Carbon Nanotubes. Science. vol. 290 pp. 1552-1555 (2000).
Borgstrom et al., “High peak-to-valley ratios observed in InAs/InP resonant tunneling quantum dot stacks,” Applied Physics Letters. vol. 78, No. 21 pp. 3232-3234 (2001).
Bumm et al., “Directed
Carroll Richard Lloyd
Credo Grace
Gorman Christopher B.
Jenkins Wilson Taylor & Hunt, P.A.
North Carolina State University
Smith Bradley K
Valentine Jami M
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