Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-07-18
2000-01-04
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257511, 257592, 257517, 257508, H01L 29732
Patent
active
060112972
ABSTRACT:
A semiconductor device having the base region surrounded by at least two continuous slots. The collector region is surrounded by at least one continuous slot formed as a continuation of one of the at least two continuous slots surrounding the base region. The portions of the slots that are over the buried layer extends beyond the surface of the buried layer and the portions of the slots not over the buried layer extends beyond the interface between the epitaxial layer and the substrate. The slots are filled with either polysilicon or tungsten. The base region terminates on the surface of the innermost slot surrounding the base region. The boundary of the base region terminates substantially perpendicular to the surface of the surrounding slot.
REFERENCES:
patent: 4292642 (1981-09-01), Appels et al.
patent: 4409606 (1983-10-01), Wagenaar et al.
patent: 4533430 (1985-08-01), Bower
patent: 4534824 (1985-08-01), Chen
patent: 4579812 (1986-04-01), Bower
patent: 4621414 (1986-11-01), Iranmanesh
patent: 4626317 (1986-12-01), Bonn
patent: 4733287 (1988-03-01), Bower
patent: 4745087 (1988-05-01), Iranmanesh
patent: 4749661 (1988-06-01), Bower
patent: 4771418 (1988-09-01), Narasimhan et al.
patent: 4795721 (1989-01-01), Bower et al.
patent: 4803176 (1989-02-01), Bower
patent: 4860082 (1989-08-01), Moriyama et al.
patent: 4933733 (1990-06-01), Iranmanesh et al.
patent: 5208169 (1993-05-01), Shah et al.
patent: 5268312 (1993-12-01), Reuss et al.
patent: 5294825 (1994-03-01), Nakagawa et al.
patent: 5386140 (1995-01-01), Matthews
patent: 5496746 (1996-03-01), Matthews
patent: 5554872 (1996-09-01), Baba et al.
patent: 5661329 (1997-08-01), Hiramoto et al.
patent: 5859469 (1999-01-01), Rynne
patent: 5912501 (1999-06-01), Rynne et al.
Advanced Micro Devices,Inc.
Hardy David B.
Nelson H. Donald
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