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Trench memory structures and operation

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Trench metal-insulator-metal (MIM) capacitors integrated...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MIS device having implanted drain-drift region and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MIS device with active trench corners and thick...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MIS device with graduated gate oxide layer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MIS device with reduced gate-to-drain capacitance

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MIS device with thick oxide layer in bottom of gate...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MOS device and process for radhard device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Floating pn junction guard region
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Trench MOS device and process for radhard device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MOS device and termination structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
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Trench MOS gate device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MOS RESURF super-junction devices

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
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Trench MOS structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MOS transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MOS type silicon carbide semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MOS-gated device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Trench MOS-gated device with a minimum number of masks

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Trench MOSFET device with improved on-resistance

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MOSFET device with polycrystalline silicon source...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench MOSFET formed using selective epitaxial growth

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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