Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-01
2005-02-01
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S328000, C257S329000
Reexamination Certificate
active
06849898
ABSTRACT:
Trench MOSFETs including active corner regions and a thick insulative layer at the bottom of the trench are disclosed, along with methods of fabricating such MOSFETs. In an exemplary embodiment, the trench MOSFET includes a thick insulative layer centrally located at the bottom of the trench. A thin gate insulative layer lines the sidewall and a peripheral portion of the bottom surface of the trench. A gate fills the trench, adjacent to the gate insulative layer. The gate is adjacent to the sides and top of the thick insulative layer. The thick insulative layer separates the gate from the drain conductive region at the bottom of the trench yielding a reduced gate-to-drain capacitance making such MOSFETs suitable for high frequency applications.
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Chen Kuo-In
Darwish Mohamed N.
Giles Frederick P.
Lui Kam Hong
Terrill Kyle
Pham Long
Silicon Valley Patent & Group LLP
Siliconix incorporated
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