Trench memory structures and operation

Details Trench memory structures and operation Trench memory structures and operation

2006-12-04

2010-11-23

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S317000, C257S296000, C257S330000, C257S331000, C365S185280, C365S185260

Reexamination Certificate

active

07838920

ABSTRACT:
Memory cells utilizing dielectric charge carrier trapping sites formed in trenches provide for non-volatile storage of data. The memory cells of the various embodiments have two control gates. One control gate is formed adjacent the trench containing the charge carrier trap. The other control gate has a portion formed over the trench, and, for certain embodiments, this control gate may extend into the trench. The charge carrier trapping sites may be discrete formations on a sidewall of a trench, a continuous layer extending from one sidewall to the other, or plugs extending between sidewalls.

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