Trench MIS device with reduced gate-to-drain capacitance

Details Trench MIS device with reduced gate-to-drain capacitance Trench MIS device with reduced gate-to-drain capacitance

2005-04-19

2005-04-19

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000, C257S303000, C257S304000, C438S242000, C438S243000, C438S244000

Reexamination Certificate

active

06882000

ABSTRACT:
Trench MIS devices including a thick insulative layer at the bottom of the trench are disclosed, along with methods of fabricating such devices. An exemplary trench MOSFET embodiment includes a thick oxide layer at the bottom of the trench, with no appreciable change in stress in the substrate along the trench bottom. The thick insulative layer separates the trench gate from the drain region at the bottom of the trench yielding a reduced gate-to-drain capacitance making such MOSFETs suitable for high frequency applications. In an exemplary fabrication process embodiment, the thick insulative layer is deposited on the bottom of the trench. A thin insulative gate dielectric is formed on the exposed sidewall and is coupled to the thick insulative layer. A gate is formed in the remaining trench volume. The process is completed with body and source implants, passivation, and metallization.

REFERENCES:
patent: 4893160 (1990-01-01), Blanchard
patent: 4894695 (1990-01-01), Ishii et al.
patent: 4953125 (1990-08-01), Okumura et al.
patent: 4954854 (1990-09-01), Dhong et al.
patent: 4992390 (1991-02-01), Chang
patent: 5183774 (1993-02-01), Satoh
patent: 5424231 (1995-06-01), Yang
patent: 5432365 (1995-07-01), Chin et al.
patent: 6262453 (2001-07-01), Hshieh
patent: 6265269 (2001-07-01), Chen et al.
patent: 6291298 (2001-09-01), Williams et al.
patent: 6437386 (2002-08-01), Hurst et al.
patent: 6444528 (2002-09-01), Murphy
patent: 199 35 442 (2000-12-01), None
patent: 9804004 (1998-01-01), None
patent: 0072372 (2000-11-01), None

Affiliated with

Also associated with

Rating

Trench MIS device with reduced gate-to-drain capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench MIS device with reduced gate-to-drain capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench MIS device with reduced gate-to-drain capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3407007