Trench MOS-gated device with a minimum number of masks

Details Trench MOS-gated device with a minimum number of masks Trench MOS-gated device with a minimum number of masks

1995-06-07

1997-07-15

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, 257360, H01L 2976, H01L 2994

Patent

active

056486707

ABSTRACT:
A low-voltage high-current discrete insulated-gate field-effect transistor which is made by a very economical process with two silicon etches. A buried poly gate gates conduction along a trench sidewall. The channel is provided by the residuum of an epi layer, and the source diffusion is provided by an unmasked implant which is screened only by various grown oxides.

REFERENCES:
patent: 4344081 (1982-08-01), Pao et al.
patent: 4345265 (1982-08-01), Blanchard
patent: 4393391 (1983-07-01), Blanchard
patent: 4402003 (1983-08-01), Blanchard
patent: 4791462 (1988-12-01), Blanchard
patent: 4893160 (1990-01-01), Blanchard
patent: 4896196 (1990-01-01), Blanchard
patent: 4914058 (1990-04-01), Blanchard
patent: 4929991 (1990-05-01), Blanchard
patent: 4952992 (1990-08-01), Blanchard
patent: 4956700 (1990-09-01), Blanchard
patent: 4983535 (1991-01-01), Blanchard
patent: 5034785 (1991-07-01), Blanchard
patent: 5352915 (1994-10-01), Hutchings et al.
Hu, "A Parametric Study of Power Mosfets," IEEE (1979).

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