Trench MIS device with graduated gate oxide layer

Details Trench MIS device with graduated gate oxide layer Trench MIS device with graduated gate oxide layer

2005-06-07

2005-06-07

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000

Reexamination Certificate

active

06903412

ABSTRACT:
The gate oxide layer of a trench MIS device includes a graduated transition region, where the thickness of the gate oxide layer decreases gradually from a thick section adjacent the bottom of the trench to a thin section adjacent the sidewall of the trench. The PN junction between the body and drain regions intersects the trench in the transition region. This structure allows for a greater margin of error in the placement of the PN junction during the manufacture of the device, since the intersection between the PN junction can be located anywhere in the transition region. The MIS device also has improved breakdown characteristics.

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