Trench MOS-gated device

Details Trench MOS-gated device Trench MOS-gated device

1998-04-09

2000-05-30

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257330, H01L 2976

Patent

active

060693851

ABSTRACT:
A low-voltage high-current discrete insulated-gate field-effect transistor which is made by a very economical process with two silicon etches. A buried poly gate gates conduction along a trench sidewall. The channel is provided by the residuum of an epi layer, and the source diffusion is provided by an unmasked implant which is screened only by various grown oxides.

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