Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-07
2006-03-07
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000
Reexamination Certificate
active
07009247
ABSTRACT:
A trench MIS device includes a thick dielectric layer at the bottom of the trench. The thick dielectric layer can be formed by the deposition or thermal growth of a dielectric material, such as silicon dioxide, on the bottom portion of the trench. The thick dielectric layer, which reduces the capacitance between the drain and gate of the device, can be formed in both the active areas of the device, where the switching function is performed, and in the inactive areas where, among other things, contacts are made to the gate electrode.
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Pham Hoai
Silicon Valley Patent & Group LLP
Siliconix Incorporated
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