Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-06
2007-11-06
Malsawma, Lex (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29260
Reexamination Certificate
active
10454031
ABSTRACT:
A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. The thick insulating layer reduces the capacitance between the gate and the drain and therefore improves the ability of the device to operate at high frequencies. Preferably, the drain-drift region is formed at least in part by fabricating spacers on the sidewalls of the trench and implanting an N-type dopant between the sidewall spacers and through the bottom of the trench. The thick bottom oxide layer is formed on the bottom of the trench while the sidewall spacers are still in place. The drain-drift region can be doped more heavily than the conventional “drift region” that is formed in an N-epitaxial layer. Thus, the device has a low on-resistance. The N-epitaxial layer increases the breakdown voltage of the MIS device. In alternative embodiments, the thick bottom oxide layer can be omitted.
REFERENCES:
patent: 4546367 (1985-10-01), Schutten et al.
patent: 4672410 (1987-06-01), Miura et al.
patent: 4683643 (1987-08-01), Nakajima et al.
patent: 4893160 (1990-01-01), Blanchard
patent: 4906588 (1990-03-01), Harrington, III
patent: 4914058 (1990-04-01), Blanchard
patent: 4941026 (1990-07-01), Temple
patent: 4943537 (1990-07-01), Harrington, III
patent: 4967245 (1990-10-01), Cogan et al.
patent: 4982260 (1991-01-01), Chang et al.
patent: 5021355 (1991-06-01), Dhong
patent: 5122474 (1992-06-01), Harrington, III
patent: 5182219 (1993-01-01), Nelson
patent: 5216275 (1993-06-01), Chen
patent: 5282018 (1994-01-01), Hiraki et al.
patent: 5323053 (1994-06-01), Luryi et al.
patent: 5424231 (1995-06-01), Yang
patent: 5442214 (1995-08-01), Yang
patent: 5473176 (1995-12-01), Kakumoto
patent: 5486714 (1996-01-01), Hong
patent: 5517046 (1996-05-01), Hsing et al.
patent: 5682051 (1997-10-01), Harrington, III
patent: 5688722 (1997-11-01), Harrington, III
patent: 5780353 (1998-07-01), Omid-Zohoor
patent: 5821583 (1998-10-01), Hshieh et al.
patent: 5866931 (1999-02-01), Bulucea et al.
patent: 5882971 (1999-03-01), Wen
patent: 5910669 (1999-06-01), Chang et al.
patent: 5915180 (1999-06-01), Hara et al.
patent: 5929481 (1999-07-01), Hshieh et al.
patent: 5976936 (1999-11-01), Miyajima
patent: 6001678 (1999-12-01), Takahashi
patent: 6020600 (2000-02-01), Miyajima et al.
patent: 6031261 (2000-02-01), Kang
patent: 6074909 (2000-06-01), Gruening
patent: 6084264 (2000-07-01), Darwish
patent: 6084268 (2000-07-01), de Fresart et al.
patent: 6096616 (2000-08-01), Nistler
patent: 6103578 (2000-08-01), Uenishi et al.
patent: 6118159 (2000-09-01), Willer et al.
patent: 6144054 (2000-11-01), Agahi et al.
patent: 6197657 (2001-03-01), Tsukamoto
patent: 6262470 (2001-07-01), Lee et al.
patent: 6291298 (2001-09-01), Williams et al.
patent: 6297101 (2001-10-01), Schaeffer
patent: 6351009 (2002-02-01), Kocon et al.
patent: 6413822 (2002-07-01), Williams et al.
patent: 6444528 (2002-09-01), Murphy
patent: 6455378 (2002-09-01), Inagawa et al.
patent: 6465843 (2002-10-01), Hirler et al.
patent: 6569738 (2003-05-01), Darwish
patent: 6657254 (2003-12-01), Hshieh et al.
patent: 6674124 (2004-01-01), Hshieh et al.
patent: 6852597 (2005-02-01), Park et al.
patent: 6855985 (2005-02-01), Williams
patent: 2001/0000033 (2001-03-01), Baliga
patent: 2001/0026989 (2001-10-01), Thapar
patent: 2002/0005549 (2002-01-01), Saito
patent: 2002/0008237 (2002-01-01), Chang et al.
patent: 2002/0060756 (2002-05-01), Kurashina
patent: 2002/0066926 (2002-06-01), Hshieh et al.
patent: 2002/0160557 (2002-10-01), Peake et al.
patent: 2003/0193074 (2003-10-01), Hshieh et al.
patent: 2004/0227182 (2004-11-01), Darwish
patent: 2005/0236665 (2005-10-01), Darwish
patent: 2006/0038223 (2006-02-01), Darwish
patent: 0 801 426 (1997-10-01), None
patent: 1 014 450 (2000-06-01), None
patent: 1-192174 (1989-08-01), None
patent: 3-211885 (1991-09-01), None
patent: 6-21468 (1994-01-01), None
patent: 10032331 (1998-02-01), None
patent: 11026758 (1999-01-01), None
patent: 11-163342 (1999-06-01), None
patent: 11068102 (1999-11-01), None
patent: 2000269487 (2000-08-01), None
patent: WO-98/04004 (1998-01-01), None
patent: WO US97/12046 (1998-01-01), None
patent: WO 00/57481 (2000-09-01), None
European Patent Office, Patent Abstracts of Japan, vol. 013, No, 483 (E-839), Nov. 2, 1989 (Hitachi).
European Patent Office, Patent Abstracts of Japan, vol. 015, No. 486 (E-1143), Dec. 10, 1991 (Matsushita).
European Patent Office, Patent Abstracts of Japan, vol. 1999, No. 11, 30, (Sep. 30, 1999) (NEC Corp.).
European Patent Office, Abstract of Japan vol. 1999, No. 04, Apr. 30, 1999 (Fuji Electronic Co. Ltd.).
European Patent Office, Abstract of Japan vol. 2000, No. 12, Jan. 3, 2000, (Toshiba Corp; Kaga Toshiba Electron KK).
European Patent Office, Abstract of Japan, vol. 1998, No. 06, Apr. 30, 1998, (Nec Corp).
European Patent Office, Abstract of Japan vol. 1999, No. 08, Jun. 30, 1999, (Toshiba Corp).
U.S. Appl. No. 11/335,747, Darwish.
Darwish Mohamed N.
Qi Jainhai
Terrill Kyle W.
Malsawma Lex
Siliconix incorporated
Steuber David E.
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