Trench MOS structure

Details Trench MOS structure Trench MOS structure

2004-06-10

2009-12-08

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29136, C257SE29258

Reexamination Certificate

active

07629647

ABSTRACT:
A semiconductor device has a trench (42) adjacent to a cell (18). The cell includes source and drain contact regions (26, 28), and a central body (40) of opposite conductivity type. The device is bidirectional and controls current in either direction with a relatively low on-resistance. Preferred embodiments include potential plates (60) that act together with source and drain drift regions (30, 32) to create a RESURF effect.

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