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Selected: M

Many million pixel image sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate

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Mark configuration, wafer with at least one mark...

Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate

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Mark configuration, wafer with at least one mark...

Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate

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Mark structure for coarse wafer alignment and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate

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Marker for alignment of non-transparent gate layer, method...

Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate

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Marker structure and method for controlling alignment of...

Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate

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Marking on underfill

Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated
Reexamination Certificate

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Mask and method for patterning a semiconductor wafer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate

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Mask and method for using the mask in lithographic processing

Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
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Mask for and method of forming a character on a substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
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Mask for correcting optical proximity effect

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate

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Mask generation technique for producing an integrated circuit wi

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent

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Mask generation technique for producing an integrated circuit wi

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Mask on a polymer having an opening width less than that of...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Mask programmable read-only memory based on nF-opening mask

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Mask programmed ROM inviolable by reverse engineering...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Mask repattern process

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate

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Mask repattern process

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate

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Mask repattern process

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate

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Mask repattern process

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Patent

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