Mask and method for using the mask in lithographic processing

Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks

Reexamination Certificate

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Details

C257S283000, C257SE23179

Reexamination Certificate

active

07030506

ABSTRACT:
A method and mask to improve measurement of alignment marks is disclosed. An exemplary embodiment of the invention includes a resist mask with a patterned alignment mark comprising an assemblage of features whose spacing is smaller than the wavelength of light used to measure the alignment. In a preferred embodiment, an alignment mark patterning process alters the appearance of the alignment mark and renders an enhanced contrast with the substrate background.

REFERENCES:
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patent: 6130750 (2000-10-01), Ausschnitt et al.
patent: 6359735 (2002-03-01), Gombert et al.
patent: 6417922 (2002-07-01), Dirksen et al.
patent: 6628392 (2003-09-01), Kuroda et al.
patent: 6778275 (2004-08-01), Bowes
patent: 2002/0080364 (2002-06-01), Monshouwer et al.
patent: 2005/0041256 (2005-02-01), Kreuzer
patent: 0 727 715 (1996-08-01), None
patent: 1 162 507 (2001-12-01), None

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