Mask programmable read-only memory based on nF-opening mask

Details Mask programmable read-only memory based on nF-opening mask Mask programmable read-only memory based on nF-opening mask

2005-06-07

2005-06-07

Ngô, Ngân V. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S750000

Reexamination Certificate

active

06903427

ABSTRACT:
The present invention discloses an nF-opening-based mask-programmable read-only memory. Because its openings can be nx (n>1) wider than its address-selection lines, this memory can use less expensive opening mask. Other mask-programmable 3-D memory (3D-M) structures are also disclosed. The present invention makes further improvements to the 3D-M's peripheral circuits. Full-read mode and self-timing can be used to improve the speed and reduce the power consumption.

REFERENCES:
patent: 6624485 (2003-09-01), Johnson
patent: 2004/0061145 (2004-04-01), Lee et al.

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