Many million pixel image sensor

Details Many million pixel image sensor Many million pixel image sensor

2011-03-15

2011-03-15

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S291000, C257S258000, C257S222000, C257S229000, C257SE27133, C257S292000

Reexamination Certificate

active

07906826

ABSTRACT:
A CMOS image sensor with a many million pixel count. Applicants have developed techniques for combining its continuous layer photodiode CMOS sensor technology with CMOS integrated circuit lithography stitching techniques to provide digital cameras with an almost unlimited number of pixels. A preferred CMOS stitching technique exploits the precise alignment accuracy of CMOS stepper processes by using specialized mask sets to repeatedly produce a single pixel array pattern many times on a single silicon wafer with no pixel array discontinuities. The single array patterns are stitched together lithographically to form a pixel array of many million pixels. A continuous multilayer photodiode layer is deposited over the top of the many million pixel array to provide a many million pixel sensor with a fill factor of 100 percent or substantially 100 percent.

REFERENCES:
patent: 6759262 (2004-07-01), Theil et al.
patent: 7436038 (2008-10-01), Engelmann et al.

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