LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode

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Group III nitride compound semiconductor light-emitting element

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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Group III nitride compound semiconductor light-emitting element

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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Group III nitride compound semiconductor light-emitting element

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

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Group III nitride compound semiconductor light-emitting element

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device

Reexamination Certificate

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Group III nitride compound semiconductor light-emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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Group III nitride compound semiconductor light-emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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Group III nitride compound semiconductor light-emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

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Group III nitride contact structures for light emitting devices

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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Group III nitride field effect transistors (FETS) capable of...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

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Group III nitride LED with silicon carbide cladding layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III nitride LED with silicon carbide substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

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Group III nitride LED with undoped cladding layer (5000.137)

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III nitride LED with undoped cladding layer and...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III nitride light emitting devices with gallium-free...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III nitride light emitting devices with progressively...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III nitride photonic devices on silicon carbide...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

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Group III nitride photonic devices on silicon carbide...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

Reexamination Certificate

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Group III nitride photonic devices on silicon carbide...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

Reexamination Certificate

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Group III nitride semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

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Group III nitride semiconductor device and epitaxial substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material

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